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| SMD Type HEXFET Power MOSFET KRF7220 IC IC Features Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Absolute Maximum Ratings Ta = 25 Parameter Drain- Source Voltage Continuous Drain Current, VGS @ -4.5V @ Ta = 25 Continuous Drain Current, VGS @ -4.5V @ Ta = 70 Pulsed Drain Current *1 Power Dissipation Power Dissipation Linear Derating Factor Single Pulse Avalanche Energy *4 Gate-to-Source Voltage Junction and Storage Temperature Range Maximum Junction-to-Ambient *3 EAS VGS TJ, TSTG R JA Symbol VDS ID ID IDM Rating -14 11 8.8 88 2.5 1.6 0.02 110 12 -55 to + 150 50 Unit V A @Ta= 25 @Ta = 70 PD PD W W W/ mJ V /W *1 Repetitive rating; pulse width limited by max. junction temperature. *3 Surface mounted on FR-4 board, t 10sec. *4 Starting TJ = 25 , L = 1.8mH,RG = 25 , IAS = 11A www.kexin.com.cn 1 SMD Type KRF7220 Electrical Characteristics Ta = 25 Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge *1 Pulse width 300 s; duty cycle 2%. Body Diode) Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss IS ISM VSD trr Qrr TJ = 25 , IS = -2.5A, VGS = 0V*1 TJ = 25 , IF =-2.5A di/dt = 100A/ s*1 160 147 Symbol V(BR)DSS V(BR)DSS/ IC IC Testconditons VGS = 0V, ID = -5mA TJ ID = -1mA,Reference to 25 VGS = -4.5V, ID = -11A*1 VGS = -2.5V, ID = -8.8A*1 Min -14 Typ Max Unit V -0.006 0.0082 0.012 0.0125 0.02 -0.6 8.4 -5.0 -100 -100 100 84 13 37 19 420 140 125 20 55 V/ RDS(on) VGS(th) gfs IDSS VDS = VGS, ID = -250 A VDS = -10V, ID = -11A*1 VDS = -11.2V, VGS = 0V VDS = -11.2V, VGS = 0V, TJ = 70 V S A IGSS VGS = -12V VGS = 12V ID = -11A VDS = -10V VGS = -5.0V,*1 VDD = -10V ID = -11A RG = 6.2 RD = 0.91 VGS = 0V VDS = -10V f = 1.0MHz *1 nA nC ns 1040 8075 4400 4150 -2.5 A -88 -1.2 240 220 V ns C pF Body Diode) *2 *2 Repetitive rating; pulse width limited by max. junction temperature. 2 www.kexin.com.cn |
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